Journal Paper

Paper Title - Comparison on the Various Properties of Thin Film Transistors Based on an Organic and Inorganic Material


Abstract
In this paper, we propose two models which can attract considerable attention from the electronic circuits’ communities by exploring the charge transport characteristics in high-performance Organic Field Effect Transistors (OFETs) based on P3HT and Inorganic Field-Effect Transistors based on V2O5. The paper describes the process of thermal evaporation of V2O5, spin coating of poly(3-hexylthiophene) (P3HT) films and analysis of the film structures by SEM,XRD etc. The investigations manifested that the existence of nano fibre like particles affected the charge transport characteristics in high-performance Organic Field Effect Transistors (OFETs). Here the driving mechanism of carrier-generated field-effect transistors (OFETs) with vanadium pentoxide (V2O5) layers is discussed. For this scenario, large on-currents were observed in an FET with a 35-nm V2O5 layer. Layers with aluminium (Al)/V2O5/Alq3/Sn/(Al) layer structures and (Al)/P3HT/Alq3/Sn/(Al) were also prepared. These devices exhibited a large current density in spite of their high carrier injection barriers between each layer and the Al electrodes. Both of these FETs significantly employ achievable performance and improved field-effect mobilities. The aim of this paper was to determine the structural and optical properties of organic and inorganic thin films deposited by spin coating and thermal evaporation respectively. Keywords – Field Effect Transistor, Spin Coating, P3HT, Vanadium Pentoxide, Mobility


Author - Silpa S. Prasad, K. Shreekrishna Kumar

Citation - Silpa S. Prasad   ,   K. Shreekrishna Kumar   ,   Silpa S. Prasad, K. Shreekrishna Kumar " Comparison on the Various Properties of Thin Film Transistors Based on an Organic and Inorganic Material " , International Journal of Industrial Electronics and Electrical Engineering , Volume-5,Issue-12  ( Dec, 2017 )

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| Published on 2018-02-09