Fin FET Modelling and Simulation Studies

Article Citation : Chinmayee Hazarika , Kritanjali Das , (2026) "Fin FET Modelling and Simulation Studies", International Journal of Industrial Electronics and Electrical Engineering (IJIEEE) , pp. 21-26, Volume-14,Issue-5

Abstract : Fin FETs have emerged as the dominant transistor architecture in advanced technology nodes due to their superior electrostatic control and scalability beyond the limits of planar MOSFETs. This paper presents a comprehensive modeling and simulation study of FinFET devices, covering analytical modeling, TCAD-based physical simulation, compact modeling for circuit design, and performance benchmarking. The study highlights the influence of fin geometry, gate work-function engineering, short-channel effects (SCEs), mobility degradation, and variability. Simulation results demonstrate improvements in sub threshold swing (SS), leakage current, and on-state performance compared to traditional planar MOSFETs. The findings serve as a reference for researchers working on device optimization and compact model development for nanoscale technology nodes. Keywords - Planar MOSFET, FinFET, TCAD modeling, fin geometry

Type : Research paper

Published : Volume-14,Issue-5