International Journal of Industrial Electronics and Electrical Engineering(IJIEEE).
Paper Title - Electron and Phonon Transport Study in the SIGE Nanowires
This paper intends to study the electron and phonon transport in the SiGe nanowires using first principles
simulations. Density functional theory (DFT) as well as the Boltzmann transport equation(BTE) were employed to evaluate the
electric conductivity and the See beck coefficient of the semiconductor nanowires. While the density functional perturbation
theory (DFPT) was employed to calculate the thermal conductivity due to phonon transport, hence the thermoelectric figure of
merit (ZT) can be predicted accurately. We varied the proportion of the Si and Ge compositions in the molecular structure and
found that the 1nm Si0.25Ge0.75nanowire has the highest ZT at 0.82.
Index Terms - first principles, density functional theory, Boltzmann transport equation, thermoelectric figure of merit.
Citation - Che-Wun Hong ,
Tzer-Shing Chen ,
Shuen-Chiao Jhan ,
Che-Wun Hong, Tzer-Shing Chen, Shuen-Chiao Jhan " Electron and Phonon Transport Study in the SIGE Nanowires " ,
International Journal of Industrial Electronics and Electrical Engineering (IJIEEE) , Volume-5,Issue-10 ( Oct, 2017 )