Journal Paper

Paper Title - SRAM Memory Testing Technique Using BISR Scheme


Abstract
Random Access Memory is major component in present day SOC, by Improving the yield of RAM improves the yield of SOC. So the repairable memories play a vital role in improving the yield of chip. Built-in self-repair (BISR) technique has been widely used to repair embedded random access memories (Ram's). If each repairable RAM uses one self contained BISR circuit (Dedicated BISR scheme), then the area cost of BISR circuits in an SOC becomes high. This, results in converse effect in the yield of Ram's. This paper presents a reconfigurable BISR (Re-BISR) scheme for repairing RAMs with different sizes and redundancy organizations. An efficient redundancy analysis algorithm is proposed to allocate redundancies of defective Ram's. In the Re-BISR, a reconfigurable built-in redundancy analysis (Re-BIRA) circuit is designed to perform the redundancy algorithm for various Ram's. A built-in self-repair (BISR) scheme for random access memories (Ram's) with 2-D redundancy has a built-in redundancy analyser (BIRA) for allocating the redundancy. The BIRA typically has a cache-like element called local bitmap for storing the fault information temporary. The BISR reuses the local bitmap to serve as spare bits such that it can repair more faults. In addition, a row/column/bit redundancy analysis (RCB-RA) algorithm for a RAM with spare rows, spare columns, and spare bits is presented. The Re-BISR structure has been synthesized and found that the area cost when compared with the Dedicated BISR structure is very small. This paper is implemented using Verilog HDL. Simulation and Synthesis is done using Model Sim and Xilinx ISE. Index Terms — About Four Key Words or Phrases in Alphabetical Order, Separated by Commas.


Author - B.Malleswari, G.Shanthi

Citation - B.Malleswari   ,   G.Shanthi   ,   B.Malleswari, G.Shanthi " SRAM Memory Testing Technique Using BISR Scheme " , International Journal of Industrial Electronics and Electrical Engineering , Volume-3,Issue-12  ( Dec, 2015 )

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| Published on 2015-12-29